• DocumentCode
    1631072
  • Title

    The effect of thermal shunt on the current instability of multiple-emitter-finger heterojunction bipolar transistors

  • Author

    Liou, L.L. ; Bayraktaroglu, B. ; Huang, C.I. ; Barrette, J.

  • Author_Institution
    Wright Lab., Wright-Patterson AFB, OH, USA
  • fYear
    1993
  • Firstpage
    253
  • Lastpage
    256
  • Abstract
    The occurrence of thermally-induced current instability in multi-emitter-finger heterojunction bipolar transistors (HBTs) is described. An equivalent thermal circuit is used to model the effect of thermal shunt on this current instability. It is shown that the thermal shunt is superior to the ballast resistor for improving power characteristics, without sacrificing microwave performance. An HBT implementing the thermal shunt technique has demonstrated a microwave power density of more than 10 mWspl mu/m2 of emitter area
  • Keywords
    heterojunction bipolar transistors; Gummel plot; effect of thermal shunt; equivalent thermal circuit; heterojunction bipolar transistors; junction temperature rise; microwave performance; microwave power density; multiple-emitter-finger; thermally-induced current instability; Heterojunction bipolar transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCOMS Circuits and Technology Meeting, 1993., Proceedings of the 1993
  • Conference_Location
    Minneapolis, MN
  • Print_ISBN
    0-7803-1316-X
  • Type

    conf

  • DOI
    10.1109/BIPOL.1993.617510
  • Filename
    617510
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1631072