DocumentCode
163116
Title
Circuits to measure the delay variability of MOSFETs
Author
Balakrishnan, K. ; Jenkins, Keith
Author_Institution
IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA
fYear
2014
fDate
24-27 March 2014
Firstpage
127
Lastpage
131
Abstract
Two test circuits have been implemented and measured in order to characterize delay variability in individual MOSFETs. Measurement results show that both circuits have high sensitivities to gate resistance, which differentiate them from other circuits which characterize variations in traditional DC parameters such as threshold voltage and channel length.
Keywords
MOSFET; delays; semiconductor device measurement; semiconductor device testing; DC parameters; MOSFET; channel length; delay variability; gate resistance; test circuits; threshold voltage; Arrays; Delays; Detectors; Electrical resistance measurement; Logic gates; Semiconductor device measurement; Voltage measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronic Test Structures (ICMTS), 2014 International Conference on
Conference_Location
Udine
ISSN
1071-9032
Print_ISBN
978-1-4799-2193-5
Type
conf
DOI
10.1109/ICMTS.2014.6841480
Filename
6841480
Link To Document