On wafer silicon integrated noise source characterization up to 110 GHz based on Germanium-on-Silicon photodiode

Author

Oeuvrard, S. ; Lampin, Jean-Francois ; Ducournau, Guillaume ; Lepilliet, Sylvie ; Danneville, Frangois ; Quemerais, Thomas ; Gloria, Daniel

Author_Institution

IEMN, Villeneuve-d´Ascq, France

fYear

2014

fDate

24-27 March 2014

Firstpage

150

Lastpage

154

Abstract

In this work, a new concept of photonic noise source has been developed and characterized, based on Germanium-on-Silicon high speed photodiode (GeHSPD). This photodiode RF output power has been preliminary characterized up to 210 GHz, using a dedicated optoelectronic bench and demonstrating available power in the range of -30 dBm. Its noise output power has been then measured using a noise receiver working in the W band in order to determine this photonic noise source Excess Noise Ratio (ENR). After refined measurements and calculations, it turns out that its ENR was found in the range of 30 dB in the W band, confirming the potential of this device to be used as a noise source.

Keywords

Ge-Si alloys; millimetre wave diodes; optoelectronic devices; photodiodes; ENR; Ge-Si; GeHSPD; W band; excess noise ratio; germanium-on-silicon photodiode; high speed photodiode; integrated noise source characterization; noise receiver; optoelectronic bench; photonic noise source; wafer silicon; Noise; Noise measurement; Optical receivers; Photodiodes; Photonics; Power generation; Radio frequency; ENR; Ge-on-Si photodiode; Noise Source; Noise parameters extraction; Optoelectronics bench; wire bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures (ICMTS), 2014 International Conference on

Conference_Location

Udine

ISSN

1071-9032

Print_ISBN

978-1-4799-2193-5

Type

conf

DOI

10.1109/ICMTS.2014.6841484

Filename

6841484