• DocumentCode
    1631416
  • Title

    NBTI-related issues in deep submicron pMOSFETs

  • Author

    Yan, F. ; Ji, X. ; Liao, Y. ; Cheng, X. ; Zhu, X. ; Shi, Y. ; Zhang, D. ; Guo, Q.

  • Author_Institution
    Inst. of Electron. Sci. & Eng., Nanjing Univ., Nanjing, China
  • fYear
    2010
  • Firstpage
    1608
  • Lastpage
    1611
  • Abstract
    Negative Bias Temperature Instability (NBTI) is an important reliability problem in deep submicron PMOSFETs. In this paper, we review the recent literature on the possible theoretical foundations and experimental features of NBTI degradation. These features, including temperature activation energy, recovery and SILC under NBTI, actually reflect the different aspect of the same physics mechanism of NBTI. These findings are expected to provide new evidences for understanding the matter.
  • Keywords
    MOSFET; semiconductor device reliability; NBTI degradation; SILC; deep submicron pMOSFET reliability; negative bias temperature instability; temperature activation energy; E´ center; Hole Trapping; K center; Negative Base Temperature Instability (NBTI); SILC; interface state trap;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4244-5797-7
  • Type

    conf

  • DOI
    10.1109/ICSICT.2010.5667429
  • Filename
    5667429
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1631416