• DocumentCode
    1631793
  • Title

    Edge field enhanced deep depletion phenomenon in MOS structures with ultra-thin gate oxides

  • Author

    Cheng, Jen-Yuan ; Lu, Hui-Ting ; Yang, Che-Yu ; Hwu, Jenn-Gwo

  • Author_Institution
    Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
  • fYear
    2010
  • Firstpage
    844
  • Lastpage
    846
  • Abstract
    The edge field enhanced deep depletion phenomenon in metal-oxide-semiconductor (MOS) structure was demonstrated. The analysis in inversion to deep depletion of ultra-thin SiO2 and HfO2 was conducted using critical field model. By examine the field ratio between edge and bulk, it is observed that the HfO2 has larger ratio than SiO2. It is supposed the edge field enhanced deep depletion phenomenon dominates both capacitance-voltage and current-voltage behavior.
  • Keywords
    MIS structures; hafnium compounds; silicon compounds; HfO2; MOS structures; SiO2; capacitance-voltage behavior; critical field model; current-voltage behavior; edge field enhanced deep depletion phenomenon; metal-oxide-semiconductor structure; ultra-thin gate oxides; Analytical models; Capacitance; Capacitance-voltage characteristics; Lighting; Logic gates; Silicon; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4244-5797-7
  • Type

    conf

  • DOI
    10.1109/ICSICT.2010.5667446
  • Filename
    5667446
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1631793