• DocumentCode
    1631855
  • Title

    Physics of metal silicides: Stability, stoichiometry, and schottky barrier control

  • Author

    Nakayama, Takashi ; Machida, Yoshiaki ; Sotome, Shinichi

  • Author_Institution
    Dept. of Phys., Chiba Univ., Chiba, Japan
  • fYear
    2010
  • Firstpage
    851
  • Lastpage
    854
  • Abstract
    Using theoretical calculations, we explain why some metal atoms like Ni produce bulk silicides and the others such as Au never produce silicides, why silicides with some stoichiometry are difficult to grow on Si substrate, why Schottky barrier for electrons simply decreases as the Si ratio in silicides increases, and how the dopants change Schottky barrier. It is shown that the keys to answer these questions are (i) the electron transfer from Si-p to metal-atom-d orbitals and (ii) the energy losses by elastic strain and bond-breaking at the interface.
  • Keywords
    Schottky barriers; atomic structure; silicon; stoichiometry; Schottky barrier control; Si; bond-breaking; elastic strain; electron transfer; metal silicides; metal-atom-d orbitals; stability; stoichiometry; Nickel; Schottky barriers; Silicides; Silicon; Strain; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4244-5797-7
  • Type

    conf

  • DOI
    10.1109/ICSICT.2010.5667449
  • Filename
    5667449