DocumentCode
1631855
Title
Physics of metal silicides: Stability, stoichiometry, and schottky barrier control
Author
Nakayama, Takashi ; Machida, Yoshiaki ; Sotome, Shinichi
Author_Institution
Dept. of Phys., Chiba Univ., Chiba, Japan
fYear
2010
Firstpage
851
Lastpage
854
Abstract
Using theoretical calculations, we explain why some metal atoms like Ni produce bulk silicides and the others such as Au never produce silicides, why silicides with some stoichiometry are difficult to grow on Si substrate, why Schottky barrier for electrons simply decreases as the Si ratio in silicides increases, and how the dopants change Schottky barrier. It is shown that the keys to answer these questions are (i) the electron transfer from Si-p to metal-atom-d orbitals and (ii) the energy losses by elastic strain and bond-breaking at the interface.
Keywords
Schottky barriers; atomic structure; silicon; stoichiometry; Schottky barrier control; Si; bond-breaking; elastic strain; electron transfer; metal silicides; metal-atom-d orbitals; stability; stoichiometry; Nickel; Schottky barriers; Silicides; Silicon; Strain; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location
Shanghai
Print_ISBN
978-1-4244-5797-7
Type
conf
DOI
10.1109/ICSICT.2010.5667449
Filename
5667449
Link To Document