Title :
Rapid-melting-growth of Ge on insulator using Cobalt (Co) induced-crystallized Ge as the seed for lateral growth
Author :
Phung, Thanh Hoa ; Chen, Meijun ; Kang, Hong Joo ; Zhang, Chunfu ; Yu, Mingbin ; Zhu, Chunxiang
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore
Abstract :
A new type of crystal seed, polycrystalline Ge (poly-Ge) formed by Co induced crystallization was used in the rapid-melting-growth (RMG) of Ge. With the poly-Ge seed, the grain size of Ge films obtained was significantly larger than the one using single crystal epitaxial Si as crystal seed and the one without any crystal seed. High quality (almost single crystal) Ge was obtained on 1 mm × 1 mm square structure and single crystal Ge was obtained on 5 μm wide Ge wires by the RMG method with Co-induced poly-Ge as the crystal seed.
Keywords :
cobalt; crystallisation; germanium; silicon-on-insulator; Co; Ge on insulator; crystal seed; induced crystallization; polycrystalline; rapid-melting-growth; size 5 mum; Epitaxial growth; Grain size; Microwave integrated circuits; Raman scattering; Silicon; Wires;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667453
