700 V segmented anode LIGBT with low on-resistance and onset Voltage

Author

Duan, Shuangliang ; Qiao, Ming ; Mao, Kun ; Zhong, Bo ; Jiang, Lingli ; Zhang, Bo

Author_Institution

State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China

fYear

2010

Firstpage

897

Lastpage

899

Abstract

A 700 V SA-LIGBT structure for high voltage applications is presented. An important feature is that the device has a good tradeoff among onset voltage, on-resistance and turn-off speed. This is realized mainly by two methods: large extent of P+ diffusion paralleled with N+ diffusion and the introduction of N-buffer layer in the anode. A robust SA-LIGBT is fabricated successfully with a breakdown voltage of 787 V, specific on-resistance of 53 mohm-cm , onset voltage of 1 V and turn-off time of 310 ns. The device is realized easily in a single crystal without epitaxial layer or buried layer.

Keywords

anodes; epitaxial layers; insulated gate bipolar transistors; N+ diffusion; N-buffer layer; P+ diffusion; breakdown voltage; buried layer; epitaxial layer; on-resistance voltage; onset voltage; segmented anode LIGBT; time 310 ns; turn-off speed; voltage 1 V; voltage 787 V; Anodes; Breakdown voltage; Crystals; Insulated gate bipolar transistors; Logic gates; Switches; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on

Conference_Location

Shanghai

Print_ISBN

978-1-4244-5797-7

Type

conf

DOI

10.1109/ICSICT.2010.5667467

Filename

5667467