200W push-pull & 110W single-ended high performance RF-LDMOS transistors for WCDMA basestation applications

Author

Dragon, C. ; Brakensiek, W. ; Burdeaux, D. ; Burger, W. ; Funk, G. ; Hurst, M. ; Rice, D.

Author_Institution

Motorola Inc., Tempe, AZ, USA

Volume

1

fYear

2003

Firstpage

69

Abstract

The performance of a 200W push-pull device and a 110W single-ended device, both using state-of-the-art silicon RF-LDMOS die technology, is described. In the 2.1 GHz band with a two-carrier WCDMA signal applied and a supply voltage of 28V, -37 dBc IM3 and 25-26% drain efficiency is achieved at 38W and 19W respectively for the two devices. This combination of linear power and efficiency make these devices ideally suited for power amplifier designs in basestation transceiver systems.

Keywords

UHF field effect transistors; UHF power amplifiers; code division multiple access; differential amplifiers; mobile radio; power MOSFET; transceivers; 110 W; 19 W; 2.1 GHz; 200 W; 25 to 26 percent; 28 V; 38 W; RF-LDMOS transistor; WCDMA basestation; power amplifier; push-pull device; silicon die; single-ended device; transceiver system; Breakdown voltage; Impedance matching; Implants; Multiaccess communication; Packaging; Power amplifiers; Power generation; Radio frequency; Silicon; Thermal management;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2003 IEEE MTT-S International

Conference_Location

Philadelphia, PA, USA

ISSN

0149-645X

Print_ISBN

0-7803-7695-1

Type

conf

DOI

10.1109/MWSYM.2003.1210885

Filename

1210885