Activation characteristics of Si-implanted GaN by rapid thermal annealing

The activation characteristics of Si ion-implanted gallium nitride (GaN) have been investigated. High-resolution X-ray diffraction (HRXRD) analyses indicate that ion-implanted damage can be effectively recovered by rapid thermal annealing (RTA) up to 1100°C. With the implantation dose 10¹⁶cm^-2, the sample presents strong n-type conductivity, reaching a maximum sheet carrier concentration 2×10¹⁵cm^-2 and a minimum sheet resistance 100Ω/□. Two exceptional blue luminescence (BL) bands, i.e. one 2.61eV for the as-implanted sample and another 2.67eV for the sample with 1100°C RTA, respectively, are observed in the photoluminescence spectra, both of which are different from previous reported results. the 2.61 BL band emission is mainly attributed to the acceptor level of complex V_Ga-Si_Ga generated by the wear-self-compensation effect, and the 2.67eV BL emission is attributed to the transition from the Si_Ga donor level to complex V_Ga-O_N acceptor level.