Dual gate controlled single electron effect in silicon nanowire transistors

Silicon nanowire transistor with side-gate and back-gate has been fabricated by electron beam lithography combined with dry oxidation on a doped silicon-on-insulator wafer. The effects of back-gate and side-gate on the properties of single electron transport were investigated by measuring the channel current as function of the applied gate voltages. The tunable single electron effect and Coulomb oscillations were observed experimentally at temperature below 80 K. The behaviors of single electron in Si nanowire transistors are discussed.