A miniaturized K-band balanced frequency doubler using InGaP HBT technology

Author

Dong-Woo Kang ; Dong-Hyun Baek ; Sang-Hoon Jeon ; Jae-Woo Park ; Songcheol Hong

Author_Institution

Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea

Volume

1

fYear

2003

Firstpage

107

Abstract

A K band balanced frequency doubler using InGaP HBTs is presented, which features high conversion gain, wide bandwidth and high rejection of fundamental signal. To obtain the balanced signal, a differential amplifier with a base-collector feedback resistor is utilized. The push-pull doubler operates in a near class B region for good efficiency. This circuit has a conversion gain of 6 dB over the output frequencies from 14 GHz to 24 GHz. The fundamental frequency suppression is better than 17 dB. The MMIC chip size is 0.6 /spl times/ 0.7 mm/sup 2/.

Keywords

III-V semiconductors; bipolar MMIC; frequency multipliers; gallium compounds; heterojunction bipolar transistors; indium compounds; microwave frequency convertors; 14 to 24 GHz; 6 dB; InGaP; InGaP HBT technology; K-band balanced frequency doubler; MMIC chip; bandwidth; base-collector feedback resistor; class B operation; conversion gain; differential amplifier; fundamental frequency suppression; push-pull doubler; Bandwidth; Circuits; Differential amplifiers; Feedback; Frequency conversion; Gain; Heterojunction bipolar transistors; K-band; MMICs; Resistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2003 IEEE MTT-S International

Conference_Location

Philadelphia, PA, USA

ISSN

0149-645X

Print_ISBN

0-7803-7695-1

Type

conf

DOI

10.1109/MWSYM.2003.1210894

Filename

1210894