Low-noise performance near BV/sub CEO/ in a 200 GHz SiGe technology at different collector design points

Author

Greenberg, D. ; Sweeney, S. ; Freeman, G. ; Ahlgren, D.

Author_Institution

IBM Res., Yorktown Heights, NY, USA

Volume

1

fYear

2003

Firstpage

113

Abstract

We explore the low-noise behavior of both high-f/sub T/ and enhanced-breakdown SiGe HBTs, showing key differences as a function of V/sub CB/. Both devices achieve values for F/sub min/ below 0.4, 1.2 and 1.4 dB at 10, 15 and 20 GHz, respectively, with corresponding G/sub A/ values better than 18.5, 14.5 and 13.2 dB. In addition, the enhanced-breakdown device demonstrates the ability to operate at 1 V higher V/sub CB/ compared with the high-f/sub T/ device prior to the onset of avalanche-induced F/sub min/ degradation. Combined with a lower C/sub CB/, this improved V/sub CB/ range allows the device to achieve higher gain for the same or lower noise.

Keywords

Ge-Si alloys; avalanche breakdown; heterojunction bipolar transistors; semiconductor device breakdown; semiconductor device noise; semiconductor materials; 0.4 to 1.4 dB; 10 to 15 GHz; 18.5 to 13.2 dB; 200 GHz; SiGe; SiGe HBT technology; associated gain; avalanche breakdown; collector design; enhanced-breakdown device; high-f/sub T/ device; minimum noise figure; Circuit noise; Doping; Electric breakdown; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Libraries; Noise figure; Silicon germanium; Wireless LAN;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2003 IEEE MTT-S International

Conference_Location

Philadelphia, PA, USA

ISSN

0149-645X

Print_ISBN

0-7803-7695-1

Type

conf

DOI

10.1109/MWSYM.2003.1210895

Filename

1210895