DocumentCode
1632698
Title
InP HBT transimpedance amplifier for 43 Gb/s optical link applications
Author
Nosal, Z.M. ; Broekaert, T.P.E.
Author_Institution
Inphi Corp., Westlake Village, CA, USA
Volume
1
fYear
2003
Firstpage
117
Abstract
Transimpedance amplifiers with the bandwidth in the 50 GHz range for applications in long haul optical networks are presented. Transimpedance value is in the 220 to 300 /spl Omega/ range, integrated input noise current /spl ap/ 7.5 - 8.5 /spl mu/A (0 - 60 GHz) and the output amplitude is between 600 mV/sub pp/ and 900 mV/sub pp/ (single ended) - dependent on the version. Circuits are designed in an InP HBT technology and consume 200 to 300 mW with +3.3 V supply voltage.
Keywords
III-V semiconductors; bipolar transistor circuits; heterojunction bipolar transistors; indium compounds; optical communication equipment; wideband amplifiers; 200 to 300 mW; 3.3 V; 43 Gbit/s; 50 GHz; InP; InP HBT transimpedance amplifier; optical link; Bandwidth; Circuits; Heterojunction bipolar transistors; Indium phosphide; Noise level; Optical amplifiers; Optical fiber communication; Optical fiber networks; Optical noise; Semiconductor optical amplifiers;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 2003 IEEE MTT-S International
Conference_Location
Philadelphia, PA, USA
ISSN
0149-645X
Print_ISBN
0-7803-7695-1
Type
conf
DOI
10.1109/MWSYM.2003.1210896
Filename
1210896
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