Title :
La2O3 insulators prepared by ALD using La(iPrCp)3 source: Self-limiting growth conditions and electrical properties
Author :
Ozawa, Kenji ; Kouda, Miyuki ; Urabe, Yuji ; Yasuda, Tetsuji ; Kakushima, Kuniyuki ; Ahmet, Parhat ; Iwai, Hiroshi
Author_Institution :
Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan
Abstract :
La2O3 insulators have been prepared by ALD using La(iPrCp)3 and H2O as the source materials. We identified two necessary conditions to achieve the self-limiting growth: temperatures lower than 200°C and extremely long purging after H2O pulses. La2O3 insulators annealed at 500°C showed good MOS properties with no hysteresis and small flat-band voltage shift. Comparisons to the have La2O3 films prepared by electron-beam evaporation indicated that the ALD process needs further optimization especially to improve the k value (presently ~12) as well as the leakage suppression.
Keywords :
MOS integrated circuits; annealing; atomic layer deposition; insulating thin films; lanthanum compounds; praseodymium compounds; ALD process; La2O3; MOS properties; electrical properties; electron-beam evaporation; flat-band voltage shift; insulators; leakage suppression; optimization; self-limiting growth conditions; temperature 500 degC; Annealing; Feeds; Films; Insulators; Leakage current; Logic gates; Water;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667485
