Title :
The research of piezoresistive effect in different temperature based on AlGaN/GaN HEFT-micro-accelerometer
Author :
Tang, Jianjun ; Liang, Ting ; Zhang, Qianqian ; Wang, Yong ; Shi, Weili ; Wang, Jie ; Xiong, Jijun
Author_Institution :
Nat. Key Lab. of Sci. & Technol. on Electron. Test & Meas., North Univ. of China, Taiyuan, China
Abstract :
In this paper, we use a novel way to research the piezoresistance coefficients of AlGaN/GaN HEFT affected by the changes of temperatures in the structure of micro-accelerometer. It is shown that saturation current of HEFT would decrease with the increasing temperature, which is about 0.028mA/°C. However, the device can work well at the temperature range of -50°C to 50°C, which indicates that it can work safely in the larger temperature range. Additional we find that the piezoresistance coefficient of HEFT is declined by the simultaneous increase in the temperature.
Keywords :
accelerometers; high electron mobility transistors; microsensors; piezoresistance; AlGaN-GaN; HEFT-micro-accelerometer; piezoresistance coefficients; piezoresistive effect; saturation current; temperature -50 C to 50 C; Aluminum gallium nitride; Current measurement; Gallium nitride; Piezoresistance; Temperature; Temperature measurement; Temperature sensors; GaN; HEFT; I–V characteristic; gravity; temperature-dependence;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667489
