Wide bandwidth, high performance waveguide-integrated P-I-N photodiodes for 40 Gbits/s receiver modules

Author

Wang, G. ; Takechi, A. ; Araki, K. ; Tokumitsu, T. ; Hanawa, I. ; Yoneda, Y. ; Sato, K. ; Kobayashi, M.

Author_Institution

Fujitsu Quantum Devices Ltd., Yamanashi, Japan

Volume

1

fYear

2003

Firstpage

151

Abstract

A side-illuminated waveguide integrated PIN photodiode (WG PIN PD) has been developed and modeled for use in 40 Gb/s PIN/preamp receiver module. The WG PIN PD exhibited a wide bandwidth over 40 GHz with a high responsivity. For the PIN/preamp modules with a GaAs pHEMT traveling wave amplifier (TWA), a clear eye-opening was observed and a recorded minimum received power of -11.2 dBm at 40 Gb/s was obtained for the first time.

Keywords

S-parameters; digital communication; equivalent circuits; frequency response; gallium arsenide; integrated optoelectronics; microwave photonics; optical receivers; optical waveguides; p-i-n photodiodes; semiconductor device models; sensitivity; 40 GHz; 40 Gbit/s; GaAs; GaAs pHEMT TWA; receiver modules; side-illuminated photodiodes; traveling wave amplifier; waveguide-integrated PIN photodiodes; wide bandwidth photodiodes; Bandwidth; Frequency measurement; High speed optical techniques; Optical receivers; Optical sensors; Optical waveguides; PIN photodiodes; Power measurement; Waveguide junctions; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2003 IEEE MTT-S International

Conference_Location

Philadelphia, PA, USA

ISSN

0149-645X

Print_ISBN

0-7803-7695-1

Type

conf

DOI

10.1109/MWSYM.2003.1210904

Filename

1210904