Investigation of the high power integrated uni-traveling carrier and waveguide integrated photodiode

Author

Liao, T.S. ; Mages, P. ; Yu, P.K.L. ; Jacobs, E.W. ; Sobti, J.B.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of California, San Diego, CA, USA

Volume

1

fYear

2003

Firstpage

155

Abstract

A uni-traveling carrier waveguide integrated photodiode (UTC-WIP) combining the advantages of a coupled waveguide integrated photodiode (WIP) and a uni-traveling carrier photodiode (UTC-PD) is investigated. Preliminary measurement results show that the DC responsivity is 0.4 A/W without an anti-reflection coating, and the peak pulse response can reach 94 mA (4.7 V across a 50 /spl Omega/ load) when the bias voltage is -9 V. The resulting device is capable of operating at 20 GHz. The IP/sub 3/ at 1 GHz and 18 GHz are 24 dBm and 8 dBm, respectively.

Keywords

equivalent circuits; integrated optoelectronics; microwave photonics; optical waveguides; photoconducting switches; photodiodes; semiconductor device models; -9 V; 20 GHz; 94 mA; analog fiber optical links; equivalent circuit model; high peak pulse response performance; high power photodiode; high speed operation; high-power switch; linearity; uni-travelling carrier photodiode; waveguide integrated photodiode; Absorption; Bandwidth; Carrier confinement; Charge carrier processes; Optical saturation; Optical waveguides; Photodiodes; Pulse measurements; Switches; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2003 IEEE MTT-S International

Conference_Location

Philadelphia, PA, USA

ISSN

0149-645X

Print_ISBN

0-7803-7695-1

Type

conf

DOI

10.1109/MWSYM.2003.1210905

Filename

1210905