Investigating the effect of non-stationary transports in UTB MOSFETs with elevated and recessed source/drain by using full band Monte Carlo simulation method

This paper presents on-state characteristics of two types of UTB FD MOSFETs simulated by Monte Carlo method. The two devices under investigation have elevated and recessed source/drain respectively. The comparison of non-stationary transports effect is made between the two devices. Different non-stationary transports effect in the two devices is the cause of different on state characteristics. Transit time and intrinsic capacitance of these devices, which can also affected by non-stationary transports effect, are further presented.