Title :
An ultra-wideband 0.18 /spl mu/m SiGe BiCMOS LNA for 3.1 GHz to 10.6 GHz wireless receivers
Author :
Xie, Haolu ; Wang, Albert
Author_Institution :
Dept. of Electr. Comput. & Eng., Illinois Inst. of Technol., Chicago, IL
Abstract :
Ultra wideband (UWB) radio emerges as a very promising wireless communication technology due to its many advantages: i.e., 7.5 GHz spectrum bandwidth, very high data rate, very low power consumption, etc. This paper presents a fully integrated 3.1-10.6 GHz low-noise amplifier (LNA) designed for UWB applications. The LNA uses shunt-series feedback topology architecture to achieve desirable ultra broadband gain and noise performance. The LNA is implemented in a commercial 0.18 mum in SiGe BiCMOS process and the measured specifications are: an adequate ultra broadband gain of 17.4 dB-7.1 dB, a low noise figure (NF) of 3.2 dB-5.5 dB across 3.1-10.6 GHz bandwidth, a very low DC power consumption of less than 10 mW at 3V supply, S11 of less than -6 dB, and S22 of less than -5 dB
Keywords :
BiCMOS integrated circuits; germanium compounds; low noise amplifiers; microwave receivers; network topology; radio receivers; silicon compounds; ultra wideband communication; 0.18 mum; 17.4 to 7.1 dB; 3 V; 3.1 to 10.6 GHz; 3.2 to 5.5 dB; SiGe; SiGe BiCMOS; UWB; low-noise amplifier; noise figure; shunt-series feedback topology; ultra wideband radio; wireless receivers; Bandwidth; BiCMOS integrated circuits; Communications technology; Energy consumption; Germanium silicon alloys; Noise measurement; Receivers; Silicon germanium; Ultra wideband technology; Wireless communication;
Conference_Titel :
Wireless Technology, 2005. The European Conference on
Conference_Location :
Paris
Print_ISBN :
2-9600551-1-X
DOI :
10.1109/ECWT.2005.1617676
