Title :
Investigation of electrical characteristics of NdAlO3/SiO2 stack gate
Author :
Liu, Hong-xia ; Kuang, Qian-wei ; Wang, Zhi-lin ; Gao, Bo ; Wang, Shu-long ; Hao, Yue
Author_Institution :
Key Lab. of Minist. of Educ. for Wide Bandgap Semicond. Devices, Xidian Univ., Xi´´an, China
Abstract :
Degradation of electrical characteristics of NdAlO3/SiO2 stack gate under the constant voltage stress (CVS) is presented. It is found that the electron trapping, positive charges and oxide trap generation acts together, which causes the degradation of NdAlO3/SiO2 stack gate. The transport mechanisms of the gate leakage current in NdAlO3/SiO2 stack gate are also investigated. Frenkel-Poole emission and Schottky emission are the main transport mechanisms of the gate leakage current for the fresh sample, while F-N tunneling and Schottky emission are responsible for the gate leakage current after stress.
Keywords :
CMOS integrated circuits; Poole-Frenkel effect; aluminium compounds; leakage currents; neodymium compounds; silicon compounds; CMOS devices; F-N tunneling; Frenkel-Poole emission; NdAlO3-SiO2; Schottky emission; complementary metal-oxide-semiconductor; constant voltage stress; electrical characteristics; electron trapping; gate leakage current; oxide trap generation; positive charges; stack gate; transport mechanisms; Capacitance-voltage characteristics; Electron traps; Equations; Leakage current; Logic gates; Stress; Tunneling;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667508
