DocumentCode :
1633307
Title :
Steady state properties of lock-on current filaments in GaAs [pulsed power switches]
Author :
Kambour, K. ; Kang, S. ; Myles, C.W. ; Hjalmarson, H.P.
Author_Institution :
Dept. of Phys., Texas Tech. Univ., Lubbock, TX, USA
Volume :
2
fYear :
1999
Firstpage :
791
Abstract :
Collective impact ionization has been used to explain lock-on in semi-insulating GaAs under high-voltage bias. The authors have used this theory to study some of the steady state properties of lock-on current filaments. In the steady state, the heat gained from the field is exactly compensated by the cooling due to phonon scattering. In the simplest approximation, the carrier distribution approaches a quasi-equilibrium Maxwell-Boltzmann distribution. In this report, the authors examine the validity of this approximation. They find that this approximation leads to a filament carrier density which is much lower than the high density needed to achieve a quasi-equilibrium distribution. Further work on this subject is in progress.
Keywords :
III-V semiconductors; approximation theory; gallium arsenide; photoconducting switches; power semiconductor switches; pulsed power switches; semiconductor device models; statistical mechanics; GaAs; carrier distribution; collective impact ionization; cooling; filament carrier density; heat gain; high-voltage bias; lock-on current filaments; phonon scattering; photoconductive semiconductor switches; pulsed power switches; quasi-equilibrium Maxwell-Boltzmann distribution; semi-insulating GaAs; steady-state properties; Charge carrier density; Cooling; Distribution functions; Gallium arsenide; Heating; Impact ionization; Optical scattering; Optical switches; Plasma temperature; Steady-state;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Pulsed Power Conference, 1999. Digest of Technical Papers. 12th IEEE International
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-5498-2
Type :
conf
DOI :
10.1109/PPC.1999.823633
Filename :
823633
Link To Document :
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