Improved electrical and thermal performance of ultra-thin RF LDMOS power transistors

We present the electrical and thermal performance of ultra-thin RF LDMOS devices. Following a proprietary process, we fabricated such devices with a thickness as reduced as 40/spl mu/m. This results in a reduction of the operating junction temperature, as demonstrated by infrared imaging experiments and three-dimensional finite-element-analysis simulations. As a result, the thermal resistance of our packaged devices reaches substantially lower values than industry standard. This allows for a higher power output and improved efficiency, as demonstrated by RF measurements.