Title :
PZT thin film bulk acoustic wave resonators and filters
Author :
Kirby, P.B. ; Su, Q.X. ; Komuro, E. ; Zhang, Q. ; Imura, M. ; Whatmore, R.W.
Author_Institution :
Sch. of Ind. & Manuf. Sci., Cranfield Univ., Bedford, UK
fDate :
6/23/1905 12:00:00 AM
Abstract :
Thin Film Bulk Acoustic Wave Resonators (FBAR) using Lead Zirconate Titanate (PZT) thin films as the piezoelectric active layer are favourable for voltage controlled oscillators and wide band filters due to the large electro-mechanical coupling coefficient of PZT. This paper reports the fabrication process and results of PZT FBARs and filters. The temperature coefficient and bias voltage effect are also presented
Keywords :
Q-factor; UHF filters; bulk acoustic wave devices; crystal resonators; lead compounds; passive filters; thin film devices; 1.6 GHz; PZT; PZT thin films; PbZrO3TiO3; Q value; bias voltage effect; fabrication process; piezoelectric active layer; temperature coefficient; thin film bulk acoustic wave resonators; wideband filter; Acoustic waves; Fabrication; Film bulk acoustic resonators; Piezoelectric films; Resonator filters; Temperature; Titanium compounds; Transistors; Voltage-controlled oscillators; Wideband;
Conference_Titel :
Frequency Control Symposium and PDA Exhibition, 2001. Proceedings of the 2001 IEEE International
Conference_Location :
Seattle, WA
Print_ISBN :
0-7803-7028-7
DOI :
10.1109/FREQ.2001.956364
