DocumentCode
1633351
Title
High performance RF power LDMOSFET technology for 2.1GHz power amplifier applications
Author
Shuming Xu ; Shibib, A. ; Zhijian Xie ; Safar, H. ; Lott, J. ; Farrel, D. ; Mastrapasqua, M.
Author_Institution
Agere Syst., Allentown, PA, USA
Volume
1
fYear
2003
Firstpage
217
Abstract
Silicon RF LDMOSFET technology is demonstrated with excellent RF performance. It achieves high power gain of 14.5dB with a high power of 130W at 2.1GHz. Its high efficiency and high linearity makes it highly desired for base station applications. 2mil substrate enables the best-in-class of thermal stability. Low HCI effect, integrated ESD and gold metal ensure high long-term reliability.
Keywords
UHF field effect transistors; electrostatic discharge; elemental semiconductors; power MOSFET; semiconductor device reliability; silicon; thermal stability; 130 W; 14.5 dB; 2 mil; 2.1 GHz; ESD; HCI effect; RF power LDMOSFET technology; Si; base station applications; efficiency; linearity; long-term reliability; power amplifier applications; power gain; thermal stability; Base stations; Electrostatic discharge; Gold; High power amplifiers; Human computer interaction; Linearity; Radio frequency; Radiofrequency amplifiers; Silicon; Thermal stability;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 2003 IEEE MTT-S International
Conference_Location
Philadelphia, PA, USA
ISSN
0149-645X
Print_ISBN
0-7803-7695-1
Type
conf
DOI
10.1109/MWSYM.2003.1210919
Filename
1210919
Link To Document