Title :
High temperature performances of AlGaN/GaN power HFETs
Author :
Nuttinck, S. ; Banerjee, B. ; Venkataraman, S. ; Laskar, J. ; Harris, M.
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
We report the variation with temperature of key parameters extracted from dc, small-signal, large-signal, and noise measurements, of AlGaN/GaN HFETs. The rates obtained are lower than that of GaAs pHEMTs confirming the potential of GaN for high temperature applications.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high-temperature electronics; microwave field effect transistors; microwave power transistors; power field effect transistors; semiconductor device measurement; semiconductor device noise; wide band gap semiconductors; AlGaN-GaN; AlGaN/GaN; dc measurements; high temperature performances; large-signal measurements; noise measurements; power HFETs; small-signal measurements; Aluminum gallium nitride; Cutoff frequency; Gallium arsenide; Gallium nitride; HEMTs; MODFETs; Noise measurement; Performance evaluation; Power generation; Temperature;
Conference_Titel :
Microwave Symposium Digest, 2003 IEEE MTT-S International
Conference_Location :
Philadelphia, PA, USA
Print_ISBN :
0-7803-7695-1
DOI :
10.1109/MWSYM.2003.1210920
