DocumentCode :
163337
Title :
Analysis of the effects of single event transients on an SAR-ADC based on charge redistribution
Author :
Lanot, A.J.C. ; Balen, Tiago R.
Author_Institution :
Dept. of Electr. Eng., Univ. Fed. do Rio Grande do Sul, Porto Alegre, Brazil
fYear :
2014
fDate :
12-15 March 2014
Firstpage :
1
Lastpage :
5
Abstract :
This work presents a study on the effects of Single Event Transients on SAR A/D converters based on charge redistribution. The effects of SETs are analyzed considering the worst-case pulses for the 130nm CMOS process. In this work, the fault injection is concentrated on the switches of the capacitor array of the studied converter. Preliminary results show that the transient effects may change the state of one or more bits of conversion. This is due the fact that the affected stage may propagate an incorrect value to the remainder of the conversion, leading to multiple bit errors on the converted data. Moreover, a SET occurring on the switch connected to the common node of the capacitors may lead to an incorrect behavior that cannot be attenuated with the increasing on the sizing of the transistors, which suggests that additional fault tolerance techniques may be needed.
Keywords :
CMOS integrated circuits; analogue-digital conversion; capacitors; fault tolerance; radiation hardening (electronics); switches; A/D converter; CMOS process; SAR-ADC; SET; capacitor array; charge redistribution; fault injection; fault tolerance technique; multiple bit error; single event transient effect; size 130 nm; successive approximation register; switches; worst case pulse; Analog-digital conversion; Decision support systems; Hafnium; Logic gates; Analog-to-Digital Converter; SAR; SETs; charge redistribution; transmission gate switches;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Test Workshop - LATW, 2014 15th Latin American
Conference_Location :
Fortaleza
Type :
conf
DOI :
10.1109/LATW.2014.6841908
Filename :
6841908
Link To Document :
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