Langatate whispering gallery resonator

Author

Tsarapkin, D.P. ; Shtin, Nicholas A.

Author_Institution

Radio Eng. Fac., MPEI, Moscow, Russia

fYear

2001

fDate

6/23/1905 12:00:00 AM

Firstpage

703

Lastpage

709

Abstract

This paper is devoted to basic characteristics of a langatate (LGT) "whispering gallery" dielectric resonator. The main attention is concentrated on frequency-temperature characteristics. Since the principal components of LGT dielectric permittivity vary in opposite directions with temperature it opens a possibility to annul the frequency-temperature dependence using that inherent compensation mechanism. This problem is studied both theoretically and experimentally and conditions providing the desired effect are found. The loss mechanism in the resonator is dominated with piezoelectric effects that lead to microwave Q-factor anisotropy. The measured X-band room temperature self Q-factor exceeds 6000 for EH-modes but is about three times lower for HE-ones

Keywords

Q-factor; dielectric resonators; gallium compounds; lanthanum compounds; permittivity; La₃Ga_5.5Ta_0.5O₁₄; X-band; dielectric resonator; frequency-temperature characteristics; high-Q resonator; inherent compensation mechanism; langatate whispering gallery resonator; loss mechanism; microwave Q-factor anisotropy; piezoelectric effects; room temperature; Anisotropic magnetoresistance; Dielectric loss measurement; Dielectric losses; Frequency; Optical materials; Optical resonators; Permittivity; Q factor; Temperature dependence; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Frequency Control Symposium and PDA Exhibition, 2001. Proceedings of the 2001 IEEE International

Conference_Location

Seattle, WA

ISSN

1075-6787

Print_ISBN

0-7803-7028-7

Type

conf

DOI

10.1109/FREQ.2001.956367

Filename

956367