• DocumentCode
    1633413
  • Title

    Development of the high repetitive impulse voltage generator using semiconductor switches

  • Author

    Okamura, K. ; Kuroda, S. ; Maeyama, M.

  • Author_Institution
    Dept. of Electr. & Electron. Syst.., Saitama Univ., Urawa, Japan
  • Volume
    2
  • fYear
    1999
  • Firstpage
    807
  • Abstract
    Using semiconductor switches of high power thyristor and L-C resonant charging method, we developed a high repetitive impulse voltage generator. In this system, an improved charging circuit with diodes is adopted to lower its impedance of charging circuit and to implement uniform impulse voltage to circuit elements of diodes and resistances. With a five stage IG, high speed charging feature of 50 micro sec and preliminary result of 2 kHz repetitive operation are confirmed.
  • Keywords
    insulated gate bipolar transistors; power semiconductor switches; pulse generators; pulsed power supplies; thyristor circuits; 2 kHz; 50 mus; L-C resonant charging method; charging circuit; diodes; five stage IG; high power thyristor; high repetitive impulse voltage generator; impedance reduction; resistances; semiconductor switches; uniform impulse voltage; Impedance; Insulated gate bipolar transistors; Power generation; Power semiconductor switches; Resonance; Semiconductor diodes; Switched capacitor circuits; Switching circuits; Thyristors; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Pulsed Power Conference, 1999. Digest of Technical Papers. 12th IEEE International
  • Conference_Location
    Monterey, CA, USA
  • Print_ISBN
    0-7803-5498-2
  • Type

    conf

  • DOI
    10.1109/PPC.1999.823637
  • Filename
    823637