Title :
A 2 GHz high-gain differential InGaP HBT driver amplifier matched for high IP3
Author :
van der Heijden, M.P. ; Spirito, M. ; de Vreede, L.C.N. ; van Straten, F. ; Burghartz, J.N.
Author_Institution :
Lab. of Electron. Components, Technol. & Mater., Delft Univ. of Technol., Netherlands
Abstract :
A 2GHz single-stage linear InGaP HBT differential driver amplifier is presented operating at I/sub C/ = 30mA and V/sub C/ = 3V. The amplifier utilizes a collector-base capacitance neutralization technique, yielding a maximum stable gain of 30dB at 2GHz. Furthermore, second-harmonic control is implemented in the in- and output terminations yielding a 20dB reduction of third-order intermodulation distortion (IM3). Moreover, the well-defined second-order terminations result in a good symmetry of the lower and upper IM3 side bands.
Keywords :
III-V semiconductors; UHF amplifiers; UHF integrated circuits; bipolar MMIC; differential amplifiers; driver circuits; gallium compounds; heterojunction bipolar transistors; indium compounds; intermodulation distortion; 2 GHz; 3 V; 30 dB; 30 mA; IP3; InGaP; collector-base capacitance neutralization; high-gain differential HBT driver amplifier; input terminations; maximum stable gain; output terminations; second-harmonic control; second-order terminations; symmetry; third-order intermodulation distortion; Capacitance; Differential amplifiers; Driver circuits; Heterojunction bipolar transistors; Intermodulation distortion; Laboratories; Linearity; MIM capacitors; Radio frequency; Radiofrequency amplifiers;
Conference_Titel :
Microwave Symposium Digest, 2003 IEEE MTT-S International
Conference_Location :
Philadelphia, PA, USA
Print_ISBN :
0-7803-7695-1
DOI :
10.1109/MWSYM.2003.1210923
