Title :
Thermal stability of ultrathin RuC film as Cu diffusion barrier
Author :
Ding, Shao-Feng ; Xie, Qi ; Detavernier, Christophe ; Qu, Xin-Ping
Author_Institution :
Dept. of Microelectron., Fudan Univ., Shanghai, China
Abstract :
The properties of ultrathin RuC film and RuC/TaN stack as the Cu diffusion barrier on Si substrate were studied. The results show that the thermal stability of the Cu/RuC/TaN/Si structure is better than that of the Cu/Ru/TaN/Si structure. A flush TaN layer can improve the thermal stability of RuC film and make it a more robust diffusion barrier for Cu metallization.
Keywords :
copper; diffusion barriers; interconnections; metallisation; ruthenium compounds; silicon; tantalum compounds; thermal stability; thin films; Cu-RuC-TaN-Si; diffusion barrier; thermal stability; ultrathin film; Annealing; Copper; Films; Silicon; Substrates; Thermal stability; X-ray scattering;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667521
