DocumentCode
1633652
Title
Thermal stability of ultrathin RuC film as Cu diffusion barrier
Author
Ding, Shao-Feng ; Xie, Qi ; Detavernier, Christophe ; Qu, Xin-Ping
Author_Institution
Dept. of Microelectron., Fudan Univ., Shanghai, China
fYear
2010
Firstpage
1009
Lastpage
1011
Abstract
The properties of ultrathin RuC film and RuC/TaN stack as the Cu diffusion barrier on Si substrate were studied. The results show that the thermal stability of the Cu/RuC/TaN/Si structure is better than that of the Cu/Ru/TaN/Si structure. A flush TaN layer can improve the thermal stability of RuC film and make it a more robust diffusion barrier for Cu metallization.
Keywords
copper; diffusion barriers; interconnections; metallisation; ruthenium compounds; silicon; tantalum compounds; thermal stability; thin films; Cu-RuC-TaN-Si; diffusion barrier; thermal stability; ultrathin film; Annealing; Copper; Films; Silicon; Substrates; Thermal stability; X-ray scattering;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location
Shanghai
Print_ISBN
978-1-4244-5797-7
Type
conf
DOI
10.1109/ICSICT.2010.5667521
Filename
5667521
Link To Document