Title :
Ru/TaSiN with different Ta/Si atomic ratio as barrier for Cu contact on NiSi substrate
Author :
Zhang, Xiao-Meng ; Zhao, Ying ; Chen, Fei ; Qu, Xin-Ping
Author_Institution :
Dept. of Microelectron., Fudan Univ., Shanghai, China
Abstract :
The thermal stability and electrical properties of Cu contact on the NiSi substrate with a Ru/TaSiN barrier stack were investigated. The Ta/Si atomic ratio of the TaSiN is varied to optimize the barrier property. The results show that by introducing certain amount of Si into the TaN film, the Ru/TaSiN structure can be both thermally and electrically stable up to 500°C annealing for 30 minutes. The Ru/TaSiN stack will have potential application as diffusion barrier for Cu contact on NiSi.
Keywords :
copper; diffusion barriers; nickel compounds; tantalum compounds; NiSi; TaSiN-Ru; temperature 500 degC; time 30 min; Annealing; Conductivity; Copper; Films; Silicon; Substrates; Thermal stability;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667526
