Title :
Silicon integrated antenna developments up to 80 GHz for millimeter wave wireless links
Author :
Montusclat, Sébastien ; Gianesello, Fréderic ; Gloria, Daniel ; Tedjini, Smaïl
Author_Institution :
STMicroelectronics, Crolles
Abstract :
Today, SiGe HBT cut-off frequencies are higher than 230 GHz (P. Chevalier, et al., 2004) and this increase allows new millimeter wave (MMW) applications on silicon such as 60 GHz WLAN and 77 GHz automotive radar. One of the success keys is then the passive integration. This study focuses on a 52 GHz silicon integrated antenna and related feeding transmission line (TL) topics. Double slot antenna integrated in a standard BiCMOS process and 40 GHz coplanar patch antenna (2.3 dB gain @ 40 GHz) with a coplanar waveguide (CPW) feed line are depicted and characterized. Integrated TL achieved on standard STMicroelectronics (ST) BiCMOS, CMOS and silicon on insulator (SOI) technologies are described, performances are given (<0.7 dB/mm losses @ 80 GHz for SOI CPW). A full modeling has been developed up to 80 GHz with new approach for CPW on silicon technology due to passivation layer
Keywords :
BiCMOS integrated circuits; coplanar waveguides; heterojunction bipolar transistors; microstrip antennas; millimetre wave integrated circuits; road vehicle radar; silicon compounds; slot antennas; transmission lines; wireless LAN; 2.3 dB; 40 GHz; 52 GHz; 60 GHz; 77 GHz; 80 GHz; BiCMOS process; STMicroelectronics; SiGe HBT cut-off frequencies; WLAN; automotive radar; coplanar patch antenna; coplanar waveguide feed line; feeding transmission line; millimeter wave wireless links; silicon integrated antenna; silicon on insulator; Antenna feeds; BiCMOS integrated circuits; CMOS technology; Coplanar waveguides; Germanium silicon alloys; Heterojunction bipolar transistors; Millimeter wave radar; Millimeter wave technology; Silicon germanium; Silicon on insulator technology;
Conference_Titel :
Wireless Technology, 2005. The European Conference on
Conference_Location :
Paris
Print_ISBN :
2-9600551-1-X
DOI :
10.1109/ECWT.2005.1617701
