Title :
Electrical and physical characteristics of the high-K Tb2O3 (terbium) dielectric deposited on the polycrystalline silicon
Author :
Kao, Chyuan-Haur ; Chen, Hsian ; Chen, Kung-Shao ; Lai, Pei-Lun ; Cheng, Shih-Nan ; Liao, Chien-Jung ; Wang, Hsin-Yuan ; Hsieh, Chih-Hung ; Lin, Chia-Han
Author_Institution :
Dept. of Electron. Eng., Chang Gung Univ., Taoyuan, Taiwan
Abstract :
In this study, the electrical characteristics of high-k Tb2O3 polyoxide capacitors combined with rapid thermal post annealing have been improved (i.e.lower leakage current, higher electrical breakdown filed and lower electron trapping rate). The post-RTA annealing treatment can passivate and reduce trap states to terminate dangling bonds and traps in the high-k Tb2O3 dielectric and the interface between high-k dielectric and polysilicon.
Keywords :
high-k dielectric thin films; passivation; rapid thermal annealing; terbium compounds; Tb2O3; dangling bonds; electron trapping rate; high-K dielectric thin films; polycrystalline silicon; polyoxide capacitors; rapid thermal post annealing; trap states; Dielectrics; Films; High K dielectric materials; Logic gates; Rapid thermal annealing; Surface roughness;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667535
