• DocumentCode
    1633927
  • Title

    Study of the sputtered Mo/TaN and Mo-Ta thin film as diffusion barrier for copper metallization

  • Author

    Chen, Fei ; Ding, Shao-Feng ; Zhang, Xiao-Meng ; Qu, Xin-Ping

  • Author_Institution
    Dept. of Microelectron., Fudan Univ., Shanghai, China
  • fYear
    2010
  • Firstpage
    1042
  • Lastpage
    1044
  • Abstract
    In this work, the properties of sputtered Mo/TaN bilayers and Mo-Ta single layer as diffusion barriers were investigated for Cu metallization. The experimental results show that the Mo(5nm)/TaN(5nm) stack can withstand annealing up to 600°C for 30min and the Mo-Ta(5nm) alloy barrier can effectively prevent Cu diffusion after 500°C annealing.
  • Keywords
    annealing; copper; diffusion barriers; semiconductor device metallisation; semiconductor thin films; sputtering; Mo-TaN; alloy barrier; annealing; copper metallization; diffusion barrier; sputtered bilayers; sputtered thin film; Annealing; Copper; Films; Resistance; Silicon; Surface morphology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4244-5797-7
  • Type

    conf

  • DOI
    10.1109/ICSICT.2010.5667536
  • Filename
    5667536
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1633927