Dynamic electro-thermal behavioral model for RF power amplifiers

Author

Boumaiza, S. ; Gauthier, J. ; Ghannouchi, F.M.

Author_Institution

Dept. of Electr. Eng., Ecole Polytech. de Montreal, Que., Canada

Volume

1

fYear

2003

Firstpage

351

Abstract

Electrical and electro-thermal memory effects influence significantly the performance of RF power amplifiers and predistortion-based linearizers as signal bandwidth and operation power increase. In this paper, we present an electro-thermal behavior model for RF power amplifiers. Input and output time domain waveforms have been used to identify the PAs model parameters. Measurements that have been conducted on a 90-watt peak LDMOS power amplifier were found to be in good agreement with those obtained from a simulation that uses the model developed and implemented in ADS environment.

Keywords

MMIC power amplifiers; UHF power amplifiers; field effect MMIC; integrated circuit modelling; linearisation techniques; radiofrequency integrated circuits; time-domain analysis; 90 W; ADS environment; LDMOS power amplifier; RF power amplifiers; dynamic electro-thermal behavioral model; model parameters; operation power; predistortion-based linearizers; signal bandwidth; time domain waveforms; Capacitance; Electric resistance; Equations; Heat sinks; Impedance; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Temperature; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2003 IEEE MTT-S International

Conference_Location

Philadelphia, PA, USA

ISSN

0149-645X

Print_ISBN

0-7803-7695-1

Type

conf

DOI

10.1109/MWSYM.2003.1210950

Filename

1210950