Title :
Future High density Memory with Vertical structured device technology
Author_Institution :
Center for Interdiscipl. Res., Tohoku Univ., Sendai, Japan
Abstract :
For the past thirty years, the downscaling has been the guiding principle in the field of High-density semiconductor memories. However, recently, the limit of planar bulk MOSFETs is becoming apparent. Therefore, in order to extend the scalability of memory technology to the nano-scale generation, a new device structure is necessary. From the viewpoint, I will discuss future High density Memory with Vertical structured device technology.
Keywords :
MOSFET; semiconductor storage; high density memory; planar bulk MOSFET; semiconductor memories; vertical structured device technology; Arrays; Memory architecture; Microprocessors; Random access memory; Silicon; Three dimensional displays;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667541
