Title :
Recent progress of phase change memory (PCM) and resistive switching random access memory (RRAM)
Author :
Wong, H. -S Philip ; Kim, SangBum ; Lee, Byoungil ; Caldwell, Marissa A. ; Liang, Jiale ; Wu, Yi ; Jeyasingh, Rakesh Gnana David ; Yu, Shimeng
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
Abstract :
Conventional memories such as SRAM, DRAM, and FLASH have set a very high cost/performance standard. Yet, recent advances in new materials, device technologies and circuits have made many emerging memories attractive candidates for a new generation of memories. This paper gives an overview of our recent research work on phase change memory (PCM) and metal oxide resistive switching memory (RRAM).
Keywords :
DRAM chips; SRAM chips; flash memories; phase change memories; DRAM; FLASH; SRAM; metal oxide resistive switching memory; phase change memory; resistive switching random access memory; Crystallization; Phase change materials; Phase change memory; Programming; Resistance; Switches;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667542
