• DocumentCode
    1634281
  • Title

    The static and dynamic behaviors of resistive random access memory and its potential applications as a memristor

  • Author

    Chung, Steve S. ; Tseng, Y. -H

  • Author_Institution
    Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
  • fYear
    2010
  • Firstpage
    1069
  • Lastpage
    1072
  • Abstract
    In this paper, the static and dynamic switching characteristics of Ti/HfO2/TiN resistive random access memory (RRAM) have been examined. Based on the experimental results, several pertinent device characteristics can be developed, which include a tunneling barrier width model to explain the RRAM switching behaviors, and the ac transient switching characteristics for circuit model development. We also investigated the potential applications of RRAM as a memristor for both digital and analog circuit design, and discuss the feasibilities and problems to be solved.
  • Keywords
    memristors; random-access storage; titanium compounds; AC transient switching characteristics; RRAM; RRAM switching behaviors; Ti-HfO2-TiN; digital-analog circuit design; memristor; resistive random access memory; static-dynamic behaviors; tunneling barrier; Memristors; Resistance; Switches; Thermionic emission; Tin; Transient analysis; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4244-5797-7
  • Type

    conf

  • DOI
    10.1109/ICSICT.2010.5667547
  • Filename
    5667547
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1634281