Title :
The static and dynamic behaviors of resistive random access memory and its potential applications as a memristor
Author :
Chung, Steve S. ; Tseng, Y. -H
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
In this paper, the static and dynamic switching characteristics of Ti/HfO2/TiN resistive random access memory (RRAM) have been examined. Based on the experimental results, several pertinent device characteristics can be developed, which include a tunneling barrier width model to explain the RRAM switching behaviors, and the ac transient switching characteristics for circuit model development. We also investigated the potential applications of RRAM as a memristor for both digital and analog circuit design, and discuss the feasibilities and problems to be solved.
Keywords :
memristors; random-access storage; titanium compounds; AC transient switching characteristics; RRAM; RRAM switching behaviors; Ti-HfO2-TiN; digital-analog circuit design; memristor; resistive random access memory; static-dynamic behaviors; tunneling barrier; Memristors; Resistance; Switches; Thermionic emission; Tin; Transient analysis; Tunneling;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667547
