• DocumentCode
    1634388
  • Title

    A study on metal-insulator-silicon hydrogen sensor with La2O3 as gate insulator

  • Author

    Chen, Gang ; Lai, P.T. ; Yu, Jerry

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Univ. of Hong Kong, Hong Kong, China
  • fYear
    2010
  • Firstpage
    1465
  • Lastpage
    1467
  • Abstract
    A new MIS Schottky-diode hydrogen sensor with La2O3 as gate insulator was fabricated. Its hydrogen-sensing properties were studied from room temperature (RT) to 300°C. Results showed that the device had excellent hydrogen-sensing performance below about 250°C.
  • Keywords
    Schottky diodes; gas sensors; lanthanum compounds; La2O3; MIS Schottky diode; gate insulator; hydrogen sensor; metal insulator silicon; Logic gates; Schottky barriers; Sensitivity; Silicon; Substrates; Temperature; Temperature sensors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4244-5797-7
  • Type

    conf

  • DOI
    10.1109/ICSICT.2010.5667552
  • Filename
    5667552
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1634388