Large signal modeling of AlGaN/GaN HEMTs with P/sub sat/>4 W/mm at 30 GHz suitable for broadband power applications

Large signal modeling and investigations of an AlGaN/GaN HEMT processed on SiC with l/sub g/=150 nm are performed with respect to broadband amplifiers up to 30 GHz. Output power values of 3.4 W or 4.25 W/mm at 18 GHz and P/sub out/=1.6 W, equivalent to 4 W/mm at 30 GHz, are measured. The device modeling shows good agreement of the measured and modeled power sweeps at 10 GHz and 30 GHz. The large signal simulations show the suitability of AlGaN/GaN HEMTs for multi-band amplifiers in the K-band.