Title :
Large signal modeling of AlGaN/GaN HEMTs with P/sub sat/>4 W/mm at 30 GHz suitable for broadband power applications
Author :
van Raay, F. ; Quay, R. ; Kiefer, R. ; Schlechtweg, M. ; Weimann, G.
Author_Institution :
Fraunhofer Inst. of Appl. Solid-State Phys., Freiburg, Germany
Abstract :
Large signal modeling and investigations of an AlGaN/GaN HEMT processed on SiC with l/sub g/=150 nm are performed with respect to broadband amplifiers up to 30 GHz. Output power values of 3.4 W or 4.25 W/mm at 18 GHz and P/sub out/=1.6 W, equivalent to 4 W/mm at 30 GHz, are measured. The device modeling shows good agreement of the measured and modeled power sweeps at 10 GHz and 30 GHz. The large signal simulations show the suitability of AlGaN/GaN HEMTs for multi-band amplifiers in the K-band.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; microwave power amplifiers; microwave power transistors; power HEMT; semiconductor device measurement; semiconductor device models; wide band gap semiconductors; 1.6 W; 10 GHz; 150 nm; 18 GHz; 3.4 W; 30 GHz; AlGaN-GaN-SiC; AlGaN/GaN HEMT large signal modeling; K-band multi-band amplifiers; broadband power amplifiers; measured/modeled power sweeps; microwave power amplifiers; Aluminum gallium nitride; Broadband amplifiers; Gallium nitride; HEMTs; MODFETs; Power amplifiers; Power generation; Power measurement; Signal processing; Silicon carbide;
Conference_Titel :
Microwave Symposium Digest, 2003 IEEE MTT-S International
Conference_Location :
Philadelphia, PA, USA
Print_ISBN :
0-7803-7695-1
DOI :
10.1109/MWSYM.2003.1210973
