Title :
Characteristics of a new trench-oxide thin-film transistor and its 1T-DRAM applications
Author :
Chiu, Hsien-Nan ; Lin, Jyi-Tsong ; Eng, Yi-Chuen ; Chang, Tzu-Feng ; Sun, Chih-Hung ; Lin, Po-Hiesh ; Kuo, Chih-Hao ; Chen, Hsuan-Hsu ; Chen, Cheng-Hsin
Author_Institution :
Dept. of Electr. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan
Abstract :
In this paper, we propose a simple trench-oxide thin-film transistor (TO TFT) process for 1T-DRAM applications. Our proposed TO TFT structure has several novel features as follows: 1. The buried oxide and the isolation oxide are carried out simultaneously in order to achieve a goal of simple process. 2. The trench design is used to improve both the sensing current windows (~ 84%) and the retention time (~ 57%). 3. The thermal stability is drastically improved by its naturally formed source/drain tie. The above mentioned features help our proposed device structure to demonstrate the desired characteristics that are better than that of a conventional TFT. Additionally, the thermal instability is drastically improved which is good for long-term device operation.
Keywords :
DRAM chips; thin film transistors; 1T-DRAM applications; TO TFT structure; buried oxide; isolation oxide; source-drain tie; trench-oxide thin-film transistor; Lattices; Logic gates; Random access memory; Temperature sensors; Thermal stability; Thin film transistors;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667562
