A large-signal FET model including thermal and trap effects with pulsed I-V measurements

Author

Kyoungmin Koh ; Hyun-Min Park ; Songcheol Hong

Author_Institution

Dept. EECS, Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea

Volume

1

fYear

2003

Firstpage

467

Abstract

A large signal FET model is presented. This includes a quiescent bias dependency to predict the non-linear dynamic behavior of a FET where thermal and trap effects are present. The intrinsic device of the model is represented by a parallel connection of non-linear currents and charges. The model parameters are extracted from bias dependent pulsed I-Vs and small-signal S-parameters. Measurements and simulations of pulsed I-Vs and S-parameters have been compared for the verification of the model at various quiescent bias voltages. Also load-pull measurement results, including the output power and PAE, have been compared to the simulation results for the validation of the non-linear behavior of the model.

Keywords

S-parameters; equivalent circuits; power field effect transistors; semiconductor device measurement; semiconductor device models; FET nonlinear dynamic behavior; FET output power; GaAs; PAE; bias dependent pulsed I-V; equivalent circuits; large-signal FET models; load-pull measurement; model parameter extraction; model quiescent bias voltage dependency; parallel nonlinear current/charge models; pulsed I-V measurements; small-signal S-parameters; thermal effects; trap effects; Equations; FETs; MESFETs; Power amplifiers; Power generation; Pulse amplifiers; Pulse measurements; Scattering parameters; Signal design; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2003 IEEE MTT-S International

Conference_Location

Philadelphia, PA, USA

ISSN

0149-645X

Print_ISBN

0-7803-7695-1

Type

conf

DOI

10.1109/MWSYM.2003.1210977

Filename

1210977