Nanoscale flash and resistive switching memories using IrOx metal nanocrystals

Author

Banerjee, W. ; Maikap, S.

Author_Institution

Dept. of Electron. Eng., Chang Gung Univ., Tao-Yuan, Taiwan

fYear

2010

Firstpage

1115

Lastpage

1117

Abstract

The nanoscale (EOT<;6 nm) flash and resistive switching memories using IrO_x nanocrystals have been investigated. The IrO_x nanocrystals embedded in high-κ Al₂O₃ film are observed by both high-resolution transmission electron microscopy and x-ray photoelectron spectroscopy. The average size and density of IrO_x nanocrystals are found to be ~3 nm and ~7×10¹²/cm², respectively. The flash memory devices with excellent endurance of 10⁴ cycles and moderate retention of 10 hours are obtained. A bipolar resistive switching memory with a resistance ratio of ~1.4×10² is observed after 1 hour of retention time.

Keywords

X-ray spectroscopy; alumina; bipolar memory circuits; flash memories; high-k dielectric thin films; iridium compounds; nanostructured materials; transmission electron microscopy; Al₂O₃; IrO_x; bipolar resistive switching memory; high-k dielectric thin film; high-resolution transmission electron microscopy; metal nanocrystal; nanoscale flash memory; x-ray photoelectron spectroscopy; Aluminum oxide; Flash memory; Hysteresis; Logic gates; Nanocrystals; Resistance; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on

Conference_Location

Shanghai

Print_ISBN

978-1-4244-5797-7

Type

conf

DOI

10.1109/ICSICT.2010.5667566

Filename

5667566