Title :
Noise optimization of CMOS wideband amplifiers with capacitive sources
Author :
Chang, Z.Y. ; Sansen, W.
Author_Institution :
Dept. Elektrotech., ESAT-MICAS, Heverlee, Belgium
Abstract :
A procedure for optimizing the noise performance of CMOS wideband amplifiers with capacitive sources is described. The procedure takes both the thermal and 1/f noise into consideration and makes it possible to determine the optimal input MOSFET dimensions and DC biasing conditions for optimal amplifier noise performance. The theoretical lower limit for the noise level that can be achieved by a CMOS technology is derived. It is shown that, for an AM wideband amplifier, a much better noise performance can be obtained by using CMOS technology than by using a bipolar one
Keywords :
CMOS integrated circuits; electron device noise; linear integrated circuits; optimisation; random noise; wideband amplifiers; 1/f noise; AM wideband amplifier; CMOS wideband amplifiers; DC biasing conditions; capacitive sources; linear IC; noise performance optimisation; optimal input MOSFET dimensions; thermal noise; Broadband amplifiers; CMOS technology; Circuit noise; Detectors; Feedback amplifiers; MOSFET circuits; Noise level; Receivers; Signal processing; Thermal resistance;
Conference_Titel :
Circuits and Systems, 1989., IEEE International Symposium on
Conference_Location :
Portland, OR
DOI :
10.1109/ISCAS.1989.100443
