DocumentCode
1634780
Title
Noise optimization of CMOS wideband amplifiers with capacitive sources
Author
Chang, Z.Y. ; Sansen, W.
Author_Institution
Dept. Elektrotech., ESAT-MICAS, Heverlee, Belgium
fYear
1989
Firstpage
685
Abstract
A procedure for optimizing the noise performance of CMOS wideband amplifiers with capacitive sources is described. The procedure takes both the thermal and 1/f noise into consideration and makes it possible to determine the optimal input MOSFET dimensions and DC biasing conditions for optimal amplifier noise performance. The theoretical lower limit for the noise level that can be achieved by a CMOS technology is derived. It is shown that, for an AM wideband amplifier, a much better noise performance can be obtained by using CMOS technology than by using a bipolar one
Keywords
CMOS integrated circuits; electron device noise; linear integrated circuits; optimisation; random noise; wideband amplifiers; 1/f noise; AM wideband amplifier; CMOS wideband amplifiers; DC biasing conditions; capacitive sources; linear IC; noise performance optimisation; optimal input MOSFET dimensions; thermal noise; Broadband amplifiers; CMOS technology; Circuit noise; Detectors; Feedback amplifiers; MOSFET circuits; Noise level; Receivers; Signal processing; Thermal resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 1989., IEEE International Symposium on
Conference_Location
Portland, OR
Type
conf
DOI
10.1109/ISCAS.1989.100443
Filename
100443
Link To Document