• DocumentCode
    1634816
  • Title

    The enhancement of write throughout for phase change memory

  • Author

    Ding, Sheng ; Song, Zhitang ; Chen, Houpeng ; Cai, Daolin ; Chen, Xiaogang

  • Author_Institution
    State Key Lab. of Functional Mater. for Inf., Chinese Acad. of Sci., Shanghai, China
  • fYear
    2010
  • Firstpage
    1121
  • Lastpage
    1123
  • Abstract
    The unbalanced speed for writing 0 (Reset) and 1 (Set) of phase change memory (PCM) causes lots of internal timing fragmentation during conventional parallel writing process. This fragmentation is the bottleneck of PCM writing speed. In this work, a novel self-write method is developed to eliminate fragmentation and enhance write throughout. The experimental result shows that this method enhances write throughout by 10%-25%.
  • Keywords
    phase change memories; PCM writing speed; internal timing fragmentation; parallel writing process; phase change memory; self-write method; unbalanced speed for writing; write throughout; Heating; Integrated circuit modeling; Phase change materials; Phase change memory; Temperature; Timing; Writing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4244-5797-7
  • Type

    conf

  • DOI
    10.1109/ICSICT.2010.5667569
  • Filename
    5667569