DocumentCode :
1634856
Title :
A 12GHz lumped-element hybrid fabricated on a micromachined dielectric-air-metal (DAM) cavity
Author :
Nishino, T. ; Yoshida, Y. ; Suehiro, Y. ; Lee, S.-S. ; Miyaguchi, K. ; Fukami, T. ; Oh-Hashi, H. ; Ishida, O.
Volume :
1
fYear :
2003
Firstpage :
487
Abstract :
A novel lumped-element hybrid is presented. The hybrid is disposed on a newly developed dielectric-air-metal (DAM) cavity, which consists of an SiN membrane above a metallized 30-um-deep cavity made by a micromachining process. This process enables to make every component be worked from one-side of a silicon (Si) substrate, and to leave back-side as a part of a package. This is indispensable to realize a very thin MEMS-packaged-device consisting of two wafers bonded. Also, patterned metal grounds can provide all kinds of lumped elements. Among those, series inductors are investigated in detail. A hybrid with series inductors and shunt capacitors is fabricated. Good agreement between the measured and simulated results was obtained to validate this structure for fabrication of micro-size microwave components on an Si substrate.
Keywords :
capacitors; inductors; membranes; micromachining; wafer bonding; 12 GHz; MEMS packaged device; Si; SiN; SiN membrane; fabrication process; lumped-element hybrid; micromachined dielectric-air-metal cavity; micromachining process; microwave component; series inductor; shunt capacitor; silicon substrate; wafer bonding; Biomembranes; Capacitors; Dielectric substrates; Inductors; Metallization; Micromachining; Packaging; Shunt (electrical); Silicon compounds; Wafer bonding;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 2003 IEEE MTT-S International
Conference_Location :
Philadelphia, PA, USA
ISSN :
0149-645X
Print_ISBN :
0-7803-7695-1
Type :
conf
DOI :
10.1109/MWSYM.2003.1210982
Filename :
1210982
Link To Document :
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