A 12GHz lumped-element hybrid fabricated on a micromachined dielectric-air-metal (DAM) cavity

Author

Nishino, T. ; Yoshida, Y. ; Suehiro, Y. ; Lee, S.-S. ; Miyaguchi, K. ; Fukami, T. ; Oh-Hashi, H. ; Ishida, O.

Volume

1

fYear

2003

Firstpage

487

Abstract

A novel lumped-element hybrid is presented. The hybrid is disposed on a newly developed dielectric-air-metal (DAM) cavity, which consists of an SiN membrane above a metallized 30-um-deep cavity made by a micromachining process. This process enables to make every component be worked from one-side of a silicon (Si) substrate, and to leave back-side as a part of a package. This is indispensable to realize a very thin MEMS-packaged-device consisting of two wafers bonded. Also, patterned metal grounds can provide all kinds of lumped elements. Among those, series inductors are investigated in detail. A hybrid with series inductors and shunt capacitors is fabricated. Good agreement between the measured and simulated results was obtained to validate this structure for fabrication of micro-size microwave components on an Si substrate.

Keywords

capacitors; inductors; membranes; micromachining; wafer bonding; 12 GHz; MEMS packaged device; Si; SiN; SiN membrane; fabrication process; lumped-element hybrid; micromachined dielectric-air-metal cavity; micromachining process; microwave component; series inductor; shunt capacitor; silicon substrate; wafer bonding; Biomembranes; Capacitors; Dielectric substrates; Inductors; Metallization; Micromachining; Packaging; Shunt (electrical); Silicon compounds; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2003 IEEE MTT-S International

Conference_Location

Philadelphia, PA, USA

ISSN

0149-645X

Print_ISBN

0-7803-7695-1

Type

conf

DOI

10.1109/MWSYM.2003.1210982

Filename

1210982