Title :
A fast integrated a-Si gate driver
Author :
Liao, Congwei ; Wang, Longyan ; He, Changde ; Liang, Yinan ; Zhang, Shengdong ; Dai, David ; Chung, Smart ; Jen, T.S.
Author_Institution :
Shenzhen Grad. Sch., Peking Univ., Shenzhen, China
Abstract :
A fast integrated gate driver with amorphous silicon thin film transistor (a-Si:H TFT) is proposed in this paper. To improve the circuit speed, a new input scheme is designed to provide a full scale pre-charge voltage. So the loss of pre-charge voltage, a challenge in the conventional designs, is avoided. Simulations show that the proposed gate driver has a much improved driving speed in comparison with the conventional ones. The improvement is more effective in the case of the higher VTH and lower supply voltage. The proposed gate driver is suitable for high performance display applications.
Keywords :
driver circuits; elemental semiconductors; silicon; thin film transistors; Si; TFT; amorphous silicon thin film transistor; full scale precharge voltage; integrated gate driver; precharge voltage; Capacitors; Clocks; Delay; Driver circuits; Integrated circuit modeling; Logic gates; Thin film transistors;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667579
