• DocumentCode
    1635140
  • Title

    Pulse voltage dependent resistive switching behaviors of HfO2-based RRAM

  • Author

    Gao, Bin ; Chen, Bing ; Chen, Yuansha ; Liu, Lifeng ; Liu, Xiaoyan ; Han, Ruqi ; Kang, Jinfeng

  • Author_Institution
    Key Lab. of Microelectron. Devices & Circuits, Peking Univ., Beijing, China
  • fYear
    2010
  • Firstpage
    1145
  • Lastpage
    1147
  • Abstract
    Voltage pulse dependent resistive switching behavior during SET process in HfO2-based RRAM device is investigated. When a resistor is connected in series to RRAM during the SET process, the resistance uniformity can be improved. Voltage pulse controlled resistance states were observed. This behavior may provide the new application with the new function circuits.
  • Keywords
    hafnium compounds; random-access storage; resistors; switching circuits; HfO2; RRAM; SET process; pulse voltage dependent resistive switching; resistive random access memory; Process control; Resistance; Resistors; Switches; Tin; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4244-5797-7
  • Type

    conf

  • DOI
    10.1109/ICSICT.2010.5667580
  • Filename
    5667580
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1635140