Title :
Improved performance of Si-NC memory using a novel two-step program scheme
Author :
Yang, Xiaonan ; Zhang, Manhong ; Wang, Yong ; Wang, Qin ; Huo, Zongliang ; Jiang, Dandan ; Long, Shibing ; Zhang, Bo ; Liu, Ming
Author_Institution :
Inst. of Microelectron., Chinese Acad. of Sci., Beijing, China
Abstract :
A new two-step program scheme is proposed for Si nanocrystal memory devices. The new scheme combines one soft Fowler-Nordheim (FN) program at low voltage and one channel-hot-electron (CHE) program. The device characteristics are compared under cycling of FN erasing and three different program methods: FN program, CHE program and the new two-step program scheme. The new scheme not only gives a large memory window, but also has the advantages of low voltage operation, good endurance and data retention characteristics.
Keywords :
storage management chips; Fowler-Nordheim program; Si nanocrystal memory devices; Si-NC memory devices; channel-hot-electron program; novel two-step program scheme; Channel hot electron injection; Logic gates; Low voltage; Nanocrystals; Reliability; Silicon; Tunneling; Combination-program; Data retention; Endurance; Nanocrystal memory;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2010 10th IEEE International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-5797-7
DOI :
10.1109/ICSICT.2010.5667583
